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 2SK4018
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L
2
--MOS V)
2SK4018
Chopper Regulator, DC-DC Converter and Motor Drive Applications
6.5 0.2
Unit: mm
5.2 0.2 1.5 0.2
4-V gate drive Low drain-source ON-resistance: RDS (ON) = 0.28 (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 100 V) Enhancement mode: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)
0.9
0.6 MAX.
1.6
5.5 0.2
High forward transfer admittance: |Yfs| = 3.5 S (typ.)
1.1 0.2 0.6 MAX.
4.1 0.2 2.3 2.3 2.3 0.2
Absolute Maximum Ratings (Ta = 25C)
Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 100 100 20 3 12 20 140 3 2 150 -55 to 150 Unit V V V A A W mJ A mJ C C
1. 2.
0.8 MAX. 1.1 MAX. 1 2 3
0.6 0.15 0.6 0.15
5.7
2 1 3
Pulse (Note 1)
Drain power dissipation (Tc = 25C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
GATE DRAIN HEAT SINK 3. SOURSE
JEDEC JEITA TOSHIBA
2-7J2B
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 6.25 125 Unit C / W C / W
Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: VDD = 50 V, Tch = 25C (initial), L = 25 mH, RG = 25 , IAR = 3 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care.
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2SK4018
Electrical Characteristics (Ta = 25C)
Characteristic Gate leakage current Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton tf VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = 100 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 4 V, ID = 2 A VGS = 10 V, ID = 2 A VDS = 10 V, ID = 2 A Min -- -- 100 0.8 -- -- 1.5 -- -- -- -- Typ. -- -- -- -- 0.36 0.28 3.5 280 50 105 20 Max 10 100 -- 2.0 0.45 0.35 -- -- -- -- -- pF Unit A A V V S
Turn-on time Switching time Fall time
--
50
-- ns
--
40
--
Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("Miller") charge toff Qg Qgs Qgd VDD 80 V, VGS = 10 V, ID = 3 A
-- -- -- --
170 13.5 8.5 5
-- -- -- -- nC
Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristic Continuous drain reverse current (Note 1) Pulse drain reverse current (Note 1) Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr IDR = 3 A, VGS = 0 V IDR = 3 A, VGS = 0 V, dIDR / dt = 50 A / s Test Condition -- -- Min -- -- -- -- -- Typ. -- -- -- 100 0.2 Max 3 12 -1.5 -- -- Unit A A V ns C
Marking
K4018
Part No. (or abbreviation code) Lot No. A line indicates Lead (Pb)-Free Finish
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2SK4018
RG = 25 VDD = 25 V, L = 25 mH
EAS =
B VDSS 1 L I2 2 B VDSS - VDD
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RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN GENERAL
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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